標題: The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
作者: Cheng, HC
Tsai, JW
Huang, CY
Luo, FC
Tuan, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: amorphous silicon;thin film transistor;bias stress;threshold voltage shift;subthreshold swing shift
公開日期: 1-十月-1997
摘要: The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses; the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFTs with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.
URI: http://hdl.handle.net/11536/271
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 10
起始頁: 6226
結束頁: 6229
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YJ90600012.pdf