標題: TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier
作者: Chiang, CC
Chen, MC
Wu, ZC
Li, LJ
Jang, SM
Yu, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-2004
摘要: This work investigates the thermal stability and physical and barrier characteristics of two species of amorphous silicon carbide dielectric films: the nitrogen-containing alpha-SiCN film with a dielectric constant of 4.9 and the nitrogen-free alpha-SiC film with a dielectric constant of 3.8. The time-dependent-dielectric-breakdown (TDDB) lifetime of the Cu damascene metallization structure is greatly improved by using an alpha-SiCN/alpha-SiC bilayer dielectric stack as the barrier layer. This improvement is attributed to the lower leakage current of alpha-SiC, absence of nitridation on the Cu surface, and better adhesion of alpha-SiC on Cu and organosilicate glass intermetal dielectric. Although the alpha-SiC film has a very low deposition rate, the alpha-SiCN/alpha-SiC bilayer dielectric is a favorable combination for the barrier layer because alpha-SiCN can protect alpha-SiC from plasma attack, such as O-2 plasma attack during photoresist stripping and organosilicate plasma attack during organosilicate glass deposition. (C) 2004 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1637358
http://hdl.handle.net/11536/27088
ISSN: 0013-4651
DOI: 10.1149/1.1637358
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 151
Issue: 2
起始頁: G89
結束頁: G92
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