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dc.contributor.authorMeng, CCen_US
dc.date.accessioned2014-12-08T15:39:36Z-
dc.date.available2014-12-08T15:39:36Z-
dc.date.issued2004-02-05en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.11326en_US
dc.identifier.urihttp://hdl.handle.net/11536/27039-
dc.description.abstractThe p(+) substrate plays an important role on the edge stability of p(+)n multiquantum well avalanche transit time devices. The p(+)n multiquantum well avalanche transit time devices on n(+) substrate easily burn out along the device edge at low breakdown current. The same structure on p(+) substrate can have the desired band diagram on device edge to eliminate edge burn-out and CW operation is thus achieved at 100.3 GHz. (C) 2004 Wiley Periodicals, Inc.en_US
dc.language.isoen_USen_US
dc.subjectmultiquantum wellen_US
dc.subjectIMPATTen_US
dc.subjectmillimeter-waveen_US
dc.titleEdge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.11326en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue3en_US
dc.citation.spage196en_US
dc.citation.epage197en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000188288400005-
dc.citation.woscount0-
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