標題: Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrate
作者: Meng, CC
電信工程研究所
Institute of Communications Engineering
關鍵字: multiquantum well;IMPATT;millimeter-wave
公開日期: 5-Feb-2004
摘要: The p(+) substrate plays an important role on the edge stability of p(+)n multiquantum well avalanche transit time devices. The p(+)n multiquantum well avalanche transit time devices on n(+) substrate easily burn out along the device edge at low breakdown current. The same structure on p(+) substrate can have the desired band diagram on device edge to eliminate edge burn-out and CW operation is thus achieved at 100.3 GHz. (C) 2004 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.11326
http://hdl.handle.net/11536/27039
ISSN: 0895-2477
DOI: 10.1002/mop.11326
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 40
Issue: 3
起始頁: 196
結束頁: 197
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