標題: Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition
作者: Tu, RC
Tun, CJ
Chuo, CC
Lee, BC
Tsai, CE
Wang, TC
Chi, J
Lee, CP
Chi, GC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InGaN;quantum dot;density;SiNx;photoluminescence;atomic force microscopy
公開日期: 15-Feb-2004
摘要: This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3 x 10(11) cm(-2) exhibited strong photoluminescence (PL) emission at room temperature (RT). Increasing the duration of the SiN, treatment of the underlying GaN layer, the RT-PL peak of the following InGaN nano-islands and QDs was found to be red-shifted from the violet to the greenish region, and the spectrum was broadened. Additionally, the average height of InGaN nano-islands and QDs increased with the duration of SiNs treatment, explaining the redshift of the RT-PL peak.
URI: http://dx.doi.org/10.1143/JJAP.43.L264
http://hdl.handle.net/11536/27029
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.L264
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 43
Issue: 2B
起始頁: L264
結束頁: L266
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