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dc.contributor.authorTsai, WJen_US
dc.contributor.authorYeh, CCen_US
dc.contributor.authorZous, NKen_US
dc.contributor.authorLiu, CCen_US
dc.contributor.authorCho, SKen_US
dc.contributor.authorWang, THen_US
dc.contributor.authorPan, SCen_US
dc.contributor.authorLu, CYen_US
dc.date.accessioned2014-12-08T15:39:34Z-
dc.date.available2014-12-08T15:39:34Z-
dc.date.issued2004-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2003.822869en_US
dc.identifier.urihttp://hdl.handle.net/11536/27006-
dc.description.abstractRead disturb-induced erase-state threshold voltage instability in a localized trapping storage Flash memory cell with a poly-silicon-oxide-nitride-oxide-silicon (SONOS) structure is investigated and reported. Our results show that positive trapped charge in bottom oxide generated during program/erase (P/E) cycles play a major role. Both gate voltage and drain voltage will accelerate the threshold voltage (V-t) drift. Hot-carrier caused disturb effect is more severe in a shorter gate length device at low temperature. A model of positive charge-assisted electron tunneling into a trapping nitride is proposed. Influence of channel doping on the V-t drift is studied. As the cell is in an "unbiased" storage mode, tunnel detrapping of positive oxide charges is responsible for the threshold voltage shift, which is insensitive to temperature.en_US
dc.language.isoen_USen_US
dc.subjectcycling-induced oxide chargesen_US
dc.subjectFlash EEPROMen_US
dc.subjecthot-carrier effecten_US
dc.subjectMXVANDen_US
dc.subjectNROMen_US
dc.subjectPHINESen_US
dc.subjectpositive charge-assisted electron tunnelingen_US
dc.subjectread disturben_US
dc.subjectpoly-silicon-oxide-nitride-oxide-siliconen_US
dc.subject(SONOS)en_US
dc.subjecttunnel detrappingen_US
dc.subjectthreshold voltage (V-t) instabilityen_US
dc.titlePositive oxide charge-enhanced read disturb in a localized trapping storage flash memory cellen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2003.822869en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume51en_US
dc.citation.issue3en_US
dc.citation.spage434en_US
dc.citation.epage439en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189247400021-
dc.citation.woscount10-
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