標題: Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
作者: Tsai, WJ
Yeh, CC
Zous, NK
Liu, CC
Cho, SK
Wang, TH
Pan, SC
Lu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: cycling-induced oxide charges;Flash EEPROM;hot-carrier effect;MXVAND;NROM;PHINES;positive charge-assisted electron tunneling;read disturb;poly-silicon-oxide-nitride-oxide-silicon;(SONOS);tunnel detrapping;threshold voltage (V-t) instability
公開日期: 1-Mar-2004
摘要: Read disturb-induced erase-state threshold voltage instability in a localized trapping storage Flash memory cell with a poly-silicon-oxide-nitride-oxide-silicon (SONOS) structure is investigated and reported. Our results show that positive trapped charge in bottom oxide generated during program/erase (P/E) cycles play a major role. Both gate voltage and drain voltage will accelerate the threshold voltage (V-t) drift. Hot-carrier caused disturb effect is more severe in a shorter gate length device at low temperature. A model of positive charge-assisted electron tunneling into a trapping nitride is proposed. Influence of channel doping on the V-t drift is studied. As the cell is in an "unbiased" storage mode, tunnel detrapping of positive oxide charges is responsible for the threshold voltage shift, which is insensitive to temperature.
URI: http://dx.doi.org/10.1109/TED.2003.822869
http://hdl.handle.net/11536/27006
ISSN: 0018-9383
DOI: 10.1109/TED.2003.822869
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 3
起始頁: 434
結束頁: 439
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