標題: Effects of tertiary butyl substitution on the charge transporting properties of rubrene-based films
作者: Fong, HH
So, SK
Sham, WY
Lo, CF
Wu, YS
Chen, CH
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: rubrene;hole mobility;organic charge transporters
公開日期: 8-Mar-2004
摘要: The charge transporting properties of rubrene (5,6,11,12-tetraphenylnaphthacene or RB), and a new rubrene-based complex, tetra(t-butyl)-rubrene [2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene or TBRB], were examined in the form of amorphous films as functions of electric field and temperature by means of time-of-flight technique. At room temperature, the hole mobility mu for RB is 7-9 x 10(-3) cm(2) V-1 s(-1) whereas mu for the more bulky TBRB is about 2 x 10(-3) cm(2) V-1 s(-1). The microscopic conduction mechanism in both materials can be modeled by the Gaussian disorder model in which hopping conduction occurs through a manifold of sites with energetic and positional disorder. The energetic disorder in RB and TBRB is almost identical and is about 78 meV in each case, and is mainly controlled by van der Waals interaction. The t-butyl groups in TBRB induce large fluctuations in the spatial separation among TBRB molecules and result in an increase in the positional disorder, and hence a reduction in the hole mobility. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.chemphys.2003.11.008
http://hdl.handle.net/11536/26950
ISSN: 0301-0104
DOI: 10.1016/j.chemphys.2003.11.008
期刊: CHEMICAL PHYSICS
Volume: 298
Issue: 1-3
起始頁: 119
結束頁: 123
Appears in Collections:Articles


Files in This Item:

  1. 000189216600012.pdf