標題: Electromigration in sputtered copper film on plasma-treated hydrogen silsesquioxane dielectric
作者: Chen, CT
Chiou, BS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: electromigration;interconnect;plasma treatment;Cu-low k dielectric;reliability;hydrogen silsesquioxane
公開日期: 1-Apr-2004
摘要: Electromigration (EM) damage is one of the major causes for the failure of interconnects. Plasma treatment, such as dry etching, is frequently employed in the fabrication of multilevel interconnection patterns. This work investigates the hydrogen silsesquioxane (HSQ) and copper integrated systems and the effect of H-2 plasma treatment on the EM of Cu. Hydrogen plasma bombardment induces a rough HSQ surface and results in a coarse morphology of the Cu film deposited on HSQ. The crystallographic texture of Cu is also affected by the plasma treatment. A decrease in the Cu I(111)/I(200) peak ratio is observed for a specimen treated with H-2 plasma. The activation energy for EM in Cu and the EM lifetime of the Cu interconnect decreases with an increased degree of plasma treatment. The activation energies obtained, ranging from 0.76 eV to 0.94 eV, suggest that the electromigration in copper proceeds via an interfacial diffusion path. Possible mechanisms for the effects of plasma treatment are explored. The rough surface and the retarded Cu (111) orientation induced by H-2 plasma bombardment are the major causes for the decrease of activation energy and EM lifetime.
URI: http://hdl.handle.net/11536/26925
ISSN: 0361-5235
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 33
Issue: 4
起始頁: 368
結束頁: 373
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