標題: Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors
作者: Chao, TS
Lee, YJ
Huang, CY
Lin, HC
Li, YM
Huang, TY
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: DTMOS;hot carrier;SOI;temperature
公開日期: 1-Apr-2004
摘要: In this study, we compared the hot carrier effects of T-gate and H-gate Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors (SOI pMOSFETs) operating under dynamic threshold mode (DT-mode) and normal mode at various temperatures. By operating under DT-mode, the threshold voltage shift is reduced. However, enhanced degradations in maximum transconductance and drive current are observed when operating under DT-mode at room temperature, especially for the T-gate structure. The transconductance enlargement effect for devices operating under DT-mode, together with the non-uniform potential distribution in T-gate structure, are believed to be responsible for the observed enhanced degradations. At elevated temperatures, the hot-carrier-induced degradations are alleviated for devices operating under DT-mode, to levels close to those of the normal mode, due to reduced impact ionization at higher temperature.
URI: http://dx.doi.org/10.1143/JJAP.43.1300
http://hdl.handle.net/11536/26918
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.1300
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 4A
起始頁: 1300
結束頁: 1304
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