標題: Diamond deposition on Au/amorphotis Si thin films
作者: Kao, CK
Yan, JK
Chang, L
Cho, SY
Chen, HG
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: diamond crystal;chemical vapor deposition;morphology
公開日期: 1-Apr-2004
摘要: Au/amorphous Si/SiO2/Si structure was used as substrate for diamond deposition by microwave plasma CVD. The Au-Si phase diagram shows a eutectic point at 363 degreesC. At deposition temperatures of 700-800 degreesC, the Au and amorphous Si films were alloyed as liquid during deposition, which resulted in formation of an array of single crystalline Si whiskers. Microstructural characterization shows that the Si whiskers have a diameter in the range of 50 nm-5 mum with facet on the top surface. The Si whiskers are shown to be oriented along <311> directions. Diamond particles deposited are found only on top of the Si whiskers. The diamond particles can be either of polycrystalline or single crystalline characteristics. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.diamond.2004.01.029
http://hdl.handle.net/11536/26913
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2004.01.029
期刊: DIAMOND AND RELATED MATERIALS
Volume: 13
Issue: 4-8
起始頁: 585
結束頁: 589
Appears in Collections:Conferences Paper


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