標題: Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers
作者: Yu, HC
Chang, SJ
Su, YK
Sung, CP
Yang, HP
Huang, CY
Lin, YW
Wang, JM
La, FI
Kuo, HC
光電工程學系
Department of Photonics
關鍵字: VCSEL;high-speed;oxide-confined;proton implantation;eye diagram
公開日期: 1-Apr-2004
摘要: High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices ill this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.
URI: http://dx.doi.org/10.1143/JJAP.43.1947
http://hdl.handle.net/11536/26894
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.1947
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 4B
起始頁: 1947
結束頁: 1950
Appears in Collections:Conferences Paper


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