標題: A distributed charge storage with GeO2 nanodots
作者: Chang, TC
Yan, ST
Hsu, CH
Tang, MT
Lee, JF
Tai, YH
Liu, PT
Sze, SM
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 5-Apr-2004
摘要: In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3x10(11) cm(-2), respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to similar to0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1697627
http://hdl.handle.net/11536/26879
ISSN: 0003-6951
DOI: 10.1063/1.1697627
期刊: APPLIED PHYSICS LETTERS
Volume: 84
Issue: 14
起始頁: 2581
結束頁: 2583
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