標題: Study of GaN light-emitting diodes fabricated by laser lift-off technique
作者: Chu, CF
Lai, FI
Chu, JT
Yu, CC
Lin, CF
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
公開日期: 15-Apr-2004
摘要: The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light-emitting diodes (LEDs) were investigated. The LLO-GaN LEDs were fabricated by lifting off the GaN LED wafer structure grown on the original sapphire substrate by a KrF excimer laser at 248 nm wavelength with the laser fluence of 0.6 J/cm2 and transferring it onto a Cu substrate. The LLO-GaN LEDs on Cu show a nearly four-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current up to 400 mA for the LLO-LEDs on Cu was also demonstrated. Based on the emission wavelength shift with the operating current data, the LLO-LEDs on Cu show an estimated improvement of heat dissipation capacities by nearly four times over the light-emitting devices on sapphire substrate. The LLO process should be applicable to other GaN-based LEDs in particular for those high light output power and high operation current devices. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1651338
http://hdl.handle.net/11536/26868
ISSN: 0021-8979
DOI: 10.1063/1.1651338
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 95
Issue: 8
起始頁: 3916
結束頁: 3922
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