標題: Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
作者: Chang, TC
Tsai, TM
Liu, PT
Yan, ST
Chang, YC
Aoki, H
Sze, SM
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-2004
摘要: In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O-2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate. of MSZ film with O-2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O-2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O-2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality. (C) 2004 American Vacuum Society.
URI: http://hdl.handle.net/11536/26824
ISSN: 1071-1023
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 22
Issue: 3
起始頁: 1196
結束頁: 1201
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