標題: Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
作者: Cheng, YL
Wang, YL
Chen, HW
Lan, JL
Liu, CP
Wu, SA
Wu, YL
Lo, KY
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-May-2004
摘要: Thermal stability of fluorine-doped silicon dioxide films deposited by high-density plasma chemical vapor deposition as a function of deposition temperature were investigated in this study. Both thermal desorption spectrum and annealing test results show that SiOF films deposited above 400 degreesC have better thermal stability. Furnace annealing data indicate that non -Si-F- bonding fluorine does exist in low-deposition-temperature SiOF films. Furthermore, secondary-ion mass spectrometer results also reveal that the fluorine in SiOF films with a lower-deposition temperature is easily diffused out and turned into the underlayer, which results in less thermally stable SiOF films. Moreover, short-loop simulation results have been subsequently tested and it was concluded that the deposition temperature of the SiOF film is extremely important for thermal stability. (C) 2004 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1690779
http://hdl.handle.net/11536/26822
ISSN: 0734-2101
DOI: 10.1116/1.1690779
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 22
Issue: 3
起始頁: 494
結束頁: 499
Appears in Collections:Conferences Paper


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