標題: An endurance evaluation method for flash EEPROM
作者: Zous, NK
Chen, YJ
Chin, CY
Tsai, WJ
Lu, TC
Chen, MS
Lu, WP
Wang, TH
Pan, SC
Lu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dynamic stress;evaluation method;Flash EEPROM;tunnel oxide
公開日期: 1-May-2004
摘要: Trap generation is hard to estimate in a Flash cell due to a dynamic stress field during program and erase. In this paper, a linear correlation is found between the erase state V-T rollup, and cycling V-T window. With the knowledge of the time dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V-T rollup during cycling is evaluated by incorporating field dependent oxide trap generation. The extracted Delta V-T degradation slope during constant FN stress can be applied quantitatively to predict the V-T window closure during Flash cell cycling.
URI: http://dx.doi.org/10.1109/TED.2004.826871
http://hdl.handle.net/11536/26800
ISSN: 0018-9383
DOI: 10.1109/TED.2004.826871
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 5
起始頁: 720
結束頁: 725
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