標題: LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
作者: JUNG, TG
CHANG, CY
CHANG, TC
LIN, HC
WANG, T
TSAI, WC
HUANG, GW
WANG, PJ
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: SI1-XGEX;LOW-TEMPERATURE EPITAXY;HYDROGEN PASSIVATION;STRAINED-LAYER SUPERLATTICES;BISTABLE EPITAXIAL GROWTH
公開日期: 1-一月-1994
摘要: Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550 degrees C to 800 degrees C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.
URI: http://dx.doi.org/10.1143/JJAP.33.240
http://hdl.handle.net/11536/2677
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.240
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 1A
起始頁: 240
結束頁: 246
顯示於類別:期刊論文


文件中的檔案:

  1. A1994MV67700046.pdf