標題: As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
作者: Laih, LH
Kuo, HC
Lin, GR
Laih, LW
Wang, SC
光電工程學系
Department of Photonics
關鍵字: As+ -implanted;oxide-confined;vertical-cavity surface-emitting laser (VCSEL);wet-thermal oxidation
公開日期: 1-Jun-2004
摘要: We report the utilization of an As+-implanted Al-GaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As+-implanted device showed a four-fold increase over the nonimplanted one at the As+ dosage of 1 x 10(16) cm(-3) and the oxidation temperature of 400 degreesC. 50 side-by-side As+-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of DeltaI(th) similar to 0.2 mA and slope-efficiency of DeltaS.E. similar to 3%.
URI: http://dx.doi.org/10.1109/LPT.2004.827116
http://hdl.handle.net/11536/26749
ISSN: 1041-1135
DOI: 10.1109/LPT.2004.827116
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 16
Issue: 6
起始頁: 1423
結束頁: 1425
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