標題: Hot-carrier effects on power characteristics of SiGeHBTs
作者: Huang, SY
Chen, KM
Huang, GW
Tseng, HC
Hsu, TL
Chang, CY
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot-carrier (HC) stress;linearity;load-pull measurement;power;SiGeHBT
公開日期: 1-Jun-2004
摘要: This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations.
URI: http://dx.doi.org/10.1109/LED.2004.828589
http://hdl.handle.net/11536/26747
ISSN: 0741-3106
DOI: 10.1109/LED.2004.828589
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 6
起始頁: 393
結束頁: 395
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