標題: High-performance RSD poly-Si TFTs with a new ONO gate dielectric
作者: Chang, KM
Yang, WC
Hung, BF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: gate dielectric;N2O-plasma oxynitride;oxide-nitride-oxide (ONO);raised source/drain (RSD);thin-film transistors (TFTs)
公開日期: 1-六月-2004
摘要: This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm(2) /V . s, and an on/off current ratio exceeding 10(8).
URI: http://dx.doi.org/10.1109/TED.2004.827382
http://hdl.handle.net/11536/26741
ISSN: 0018-9383
DOI: 10.1109/TED.2004.827382
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 6
起始頁: 995
結束頁: 1001
顯示於類別:期刊論文


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