Title: Magnetic switching and reversal process in a tip ring structure
Authors: Liou, Y
Chen, DC
Yu, C
Chen, JS
Lee, SF
Yao, YD
Tzeng, CC
Chen, TY
Cheng, KW
Ma, R
Department of Materials Science and Engineering
Issue Date: 1-Jun-2004
Abstract: Patterned Permalloy submicron-size structures have been fabricated by e-beam lithography in the shape of a ring with a tip. A tip was intentionally added into the ring as a geometrical defect to interrupt the continuity of the magnetization, which aligns along the ring, in order to pin the domain wall. Magnetic switching and reversal process have been measured by the magnetoresistance measurement. The switching field about 260 Oe was obtained. At the remanent state, there was a 0.21% difference in the magnetoresistance between the angles of 90degrees and 0degrees that was equivalent to the domain wall magnetoresistance. By applying an external field, the domain wall moved along the ring under a lower field (100 Oe), which is smaller than the switching field. A drop (0.24%) in the resistance between the angle of 70degrees-120degrees has been observed that means the domain wall was moving into the voltage measuring region during the rotation. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1688672
ISSN: 0021-8979
DOI: 10.1063/1.1688672
Volume: 95
Issue: 11
Begin Page: 6723
End Page: 6725
Appears in Collections:Conferences Paper

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