標題: A novel 25-nm modified Schottky-barrier FinFET with high performance
作者: Tsui, BY
Lin, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: FinFET;Schottky barrier;silicon-on-insulator (SOI)
公開日期: 1-Jun-2004
摘要: High-performance modified Schottky barrier (MSB) FinFET with 25-nm channel length and fully silicided source/drain (S/D) is proposed for the first time. Using an implant-to-silicide technique, an ultrashort and defect-free S/D extension can be formed at temperature as low as 600 degreesC. The MSB FinFET exhibits better current-voltage characteristics than those of published Schottky barrier devices and FinFETs. With 4-nm-thick gate oxide, the I-on /I-off current ratio higher than 10(9) is achieved. The subthreshold swing of 25-nm and 49-nm MSB FinFETs is 83 and 64.5 mV/dec at room temperature. The advantage of low thermal budget relaxes the thermal stability issue for metal gate/high-kappa dielectric integration. It is believed that the proposed MSB FinFET would be a very promising nano device.
URI: http://dx.doi.org/10.1109/LED.2004.828980
http://hdl.handle.net/11536/26722
ISSN: 0741-3106
DOI: 10.1109/LED.2004.828980
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 6
起始頁: 430
結束頁: 432
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