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dc.contributor.authorLien, YCen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorChang, HCen_US
dc.contributor.authorChu, LHen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorLee, HMen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorShen, PTen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:39:05Z-
dc.date.available2014-12-08T15:39:05Z-
dc.date.issued2004-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2004.829027en_US
dc.identifier.urihttp://hdl.handle.net/11536/26721-
dc.description.abstractA 0.1-mum T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 mum and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency f(T) of 154 GHz and a maximum frequency f(max). of 300 GHz. The noise figure for the 160 mum gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 mum MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation.en_US
dc.language.isoen_USen_US
dc.subjectcutoff frequencyen_US
dc.subjecte-beamen_US
dc.subjectgate lengthen_US
dc.subjectmaximum frequencyen_US
dc.subjectmetamorphic high electron-mobility transistorsen_US
dc.subject(MHEMTs)en_US
dc.subjectnoise figure (NF)en_US
dc.subjectT-gateen_US
dc.subjectthermally reflowen_US
dc.titleLow-noise metamorphic HEMTs with reflowed 0.1 mu m T-gateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2004.829027en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume25en_US
dc.citation.issue6en_US
dc.citation.spage348en_US
dc.citation.epage350en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000221659700002-
dc.citation.woscount23-
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