標題: Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gate
作者: Lien, YC
Chang, EY
Chang, HC
Chu, LH
Huang, GW
Lee, HM
Lee, CS
Chen, SH
Shen, PT
Chang, CY
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: cutoff frequency;e-beam;gate length;maximum frequency;metamorphic high electron-mobility transistors;(MHEMTs);noise figure (NF);T-gate;thermally reflow
公開日期: 1-Jun-2004
摘要: A 0.1-mum T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 mum and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency f(T) of 154 GHz and a maximum frequency f(max). of 300 GHz. The noise figure for the 160 mum gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 mum MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation.
URI: http://dx.doi.org/10.1109/LED.2004.829027
http://hdl.handle.net/11536/26721
ISSN: 0741-3106
DOI: 10.1109/LED.2004.829027
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 6
起始頁: 348
結束頁: 350
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