標題: RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
作者: Ding, SJ
Hu, H
Zhu, CX
Kim, SJ
Yu, XF
Li, MF
Cho, BJ
Chan, DSH
Yu, MB
Rustagi, SC
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: atomic layer-deposit (ALD);HfO2-Al2O3 laminate;metal-insulator-metal (MIM) capacitor;radio frequency (RF);reliability
公開日期: 1-Jun-2004
摘要: High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/mum(2)) up to 20 GHz, low leakage current of 4.9 x 10(-8) A/cm(2) at 2 V and 125 degreesC, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (alpha) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.
URI: http://dx.doi.org/10.1109/TED.2004.827367
http://hdl.handle.net/11536/26700
ISSN: 0018-9383
DOI: 10.1109/TED.2004.827367
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 6
起始頁: 886
結束頁: 894
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