標題: Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering
作者: Lin, CC
Chen, SY
Cheng, SY
Lee, HY
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 14-Jun-2004
摘要: An nitrogen-implanted p-type ZnO film has been grown on a Si substrate buffered with Si3N4 using radio-frequency magnetron sputtering. The Si3N4 buffer layer can effectively improve film stoichiometry and reduce the formation of oxygen vacancies compared to ZnO on Si. The electrical properties of the p-type ZnO films implanted with 5x10(12)-1x10(14) cm(-2) N+ dose show a hole concentration of 5.0x10(16)-7.3x10(17) cm(-3), hole mobility of 2.51-6.02 cm(2)/V s, and resistivity of 10.11-15.3 Omega cm. The p-type ZnO films also showed an excellent crystallinity and a strong ultraviolet emission peak near 3.30 eV at room temperature. Moreover, as evidenced by extended x-ray absorption fine structure analysis, the local structure of the p-type ZnO films was changed due to the substitution of nitrogen ions for oxygen ions in p-type ZnO films. Our finding of p-type ZnO films grown on a Si3N4/Si substrate could provide a simple method to fabricate reproducible p-type ZnO films on silicon substrate for the development of large-scale optoelectronic integration device. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1763640
http://hdl.handle.net/11536/26674
ISSN: 0003-6951
DOI: 10.1063/1.1763640
期刊: APPLIED PHYSICS LETTERS
Volume: 84
Issue: 24
起始頁: 5040
結束頁: 5042
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