標題: Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors
作者: Ke, WC
Huang, HY
Ku, CS
Yen, KH
Lee, L
Chen, WK
Chou, WC
Lee, MC
Chen, WH
Lin, WJ
Cheng, YC
Cherng, YT
電子物理學系
Department of Electrophysics
關鍵字: GaN dot;flow-rate modulation epitaxy;dot density;Ga metal;Volmet-Weber
公開日期: 15-Jun-2004
摘要: The self-organized GaN dot structure is successfully grown on a slightly lattice-mismatched Al0.11Ga0.89N epilayer using flow-rate modulation epitaxy (FME) growth technique. From the variation of dot density with growth temperature, we can observe that the GaN dot growth is controlled predominately by the surface diffusion of Ga adatoms at substrate temperatures below 915degreesC and by re-evaporation at higher temperatures. Because of the special alternating gas supply feature in FME, during the Ga source step, it is the Ga metal that is deposited on the underlying Al0.11Ga0.89N layer. This is because of the large lattice mismatch of 41.8% between the Ga metal (4.51 Angstrom) and Al0.11Ga0.89N (3.18 Angstrom). We consider that the GaN dot growth in our study is mainly through the Volmer-Weber growth mode, not the commonly used Stranski-Krastanow growth mode.
URI: http://dx.doi.org/10.1143/JJAP.43.L780
http://hdl.handle.net/11536/26667
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.L780
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 43
Issue: 6B
起始頁: L780
結束頁: L783
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