標題: Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
作者: Cheng, YL
Wang, YL
Lan, JK
Wu, SA
Chang, SC
Lo, KY
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jul-2004
摘要: Integration issues of metal line delamination from fluorinated silica glass (FSG) in deep submicron intermetal dielectric applications were investigated in this study. A metal line peeled off after a nonoptimized in situ deposition of undoped-silicon-glass (USG; SiO2) capping layer followed the post-FSG-chemical mechanical polishing N-2 treatment. It was found that higher bias power and longer process time of N-2 treatment led to more active fluorine species diffusing from the FSG films to the USG surface, which might react with subsequent Ti/TiN/W metal layer and result in metal delamination. Using plasma-enhanced N-2 treatment and ex situ USG capping with lower initial deposition temperature by extra cooling step, the stability of the FSG films was improved and resulted in a robust structure without metal peeling. (C) 2004 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1767107
http://hdl.handle.net/11536/26653
ISSN: 1071-1023
DOI: 10.1116/1.1767107
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 22
Issue: 4
起始頁: 1792
結束頁: 1796
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