Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsu, CMen_US
dc.contributor.authorLai, HJen_US
dc.contributor.authorKuo, CTen_US
dc.date.accessioned2014-12-08T15:38:55Z-
dc.date.available2014-12-08T15:38:55Z-
dc.date.issued2004-07-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1735908en_US
dc.identifier.urihttp://hdl.handle.net/11536/26652-
dc.description.abstractThe effect of the interfacial reaction of Co catalyst with a Si substrate on growth of carbon nanotubes (CNTs) was investigated. Well-aligned multiwall CNTs (MWCNTs) were synthesized and applied barrier layers by microwave plasma-enhanced chemical vapor deposition (MPECVD). Growth proceeded in a flowing mixture of H-2, CH4, and N-2 as precursors at a temperature of 600 degreesC and a -200 V substrate bias; Co was sputtered as the catalytic material. Transmission electron microscopy (TEM) and x-ray diffraction were employed to examine the growth behavior of CNTs on Si (100) substrates on which Co had been deposited by MPECVD. The TEM results indicate that discrete conical CoSi2 layers with {111} and (100) faceted interfaces were formed on a Si (100) substrate during CNTs growth. Direct evidence that the growth is by tip growth and base growth is presented. The results show that well-aligned CNTs exhibit a significant emission current. The field emission characteristics of CNTs are contributed to the relationship between the application of different barrier layers and the growth mode of CNTs. (C) 2004 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleGrowth behavior and interfacial reaction between carbon nanotubes and Si substrateen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.1735908en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume22en_US
dc.citation.issue4en_US
dc.citation.spage1461en_US
dc.citation.epage1465en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000223322000064-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000223322000064.pdf