標題: Growth behavior and interfacial reaction between carbon nanotubes and Si substrate
作者: Hsu, CM
Lai, HJ
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jul-2004
摘要: The effect of the interfacial reaction of Co catalyst with a Si substrate on growth of carbon nanotubes (CNTs) was investigated. Well-aligned multiwall CNTs (MWCNTs) were synthesized and applied barrier layers by microwave plasma-enhanced chemical vapor deposition (MPECVD). Growth proceeded in a flowing mixture of H-2, CH4, and N-2 as precursors at a temperature of 600 degreesC and a -200 V substrate bias; Co was sputtered as the catalytic material. Transmission electron microscopy (TEM) and x-ray diffraction were employed to examine the growth behavior of CNTs on Si (100) substrates on which Co had been deposited by MPECVD. The TEM results indicate that discrete conical CoSi2 layers with {111} and (100) faceted interfaces were formed on a Si (100) substrate during CNTs growth. Direct evidence that the growth is by tip growth and base growth is presented. The results show that well-aligned CNTs exhibit a significant emission current. The field emission characteristics of CNTs are contributed to the relationship between the application of different barrier layers and the growth mode of CNTs. (C) 2004 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1735908
http://hdl.handle.net/11536/26652
ISSN: 0734-2101
DOI: 10.1116/1.1735908
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 22
Issue: 4
起始頁: 1461
結束頁: 1465
Appears in Collections:Conferences Paper


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