標題: Enhancement of data transfer rate of phase change optica disk by doping nitrogen in Ge-In-Sb-Te recording layer
作者: Yeh, TT
Hsieh, TE
Shieh, HPD
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
關鍵字: Ge-In-Sb-Te recording material;data transfer rate;recrystallization speed;nitrogen doping
公開日期: 1-Aug-2004
摘要: This work investigated the enhancement of the data transfer rate and/or recrystallization speed of Ge-In-Sb-Te recording material by nitrogen doping. The effects of nitrogen content on the dynamic properties of optical disks and the corresponding microstructural changes of the recording layer were studied. The experimental results showed that nitrogen doping at a sputtering gas flow ratio of N-2/Ar = 3% might enhance the data transfer rate of an optical disk up to 1.6 times without severely damaging the signal jitter values. However, the disks failed the dynamic tests when too much nitrogen (N-2/Ar greater than or equal to 5%) was introduced. Dynamic testing also revealed that nitrogen doping slightly increased the noise level and jitter of the disks. Transmission electron microscopy (TEM) found that nitrogen doping promoted a phase transformation by generating numerous nucleation sites uniformly distributed in the recording layer and hence increased recrystallization speed.
URI: http://dx.doi.org/10.1143/JJAP.43.5316
http://hdl.handle.net/11536/26544
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.5316
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 8A
起始頁: 5316
結束頁: 5320
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