標題: Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
作者: Chang, KM
Chu, JY
Cheng, CC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: GaN;indium-tin-oxide (ITO);In0.1Ga0.9N;light-emitting diodes (LEDs)
公開日期: 1-Aug-2004
摘要: Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In0.1Ga0.9N layer is grown as an intermediate between ITO And p-GaN. The contact resistivity around 2.6 x 10(-2) Omega . cm(2) results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.
URI: http://dx.doi.org/10.1109/LPT.2004.830523
http://hdl.handle.net/11536/26528
ISSN: 1041-1135
DOI: 10.1109/LPT.2004.830523
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 16
Issue: 8
起始頁: 1807
結束頁: 1809
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