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dc.contributor.authorChen, JMen_US
dc.contributor.authorLiu, SJen_US
dc.contributor.authorLee, JMen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorYang, HDen_US
dc.date.accessioned2014-12-08T15:38:44Z-
dc.date.available2014-12-08T15:38:44Z-
dc.date.issued2004-08-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physc.2004.03.144en_US
dc.identifier.urihttp://hdl.handle.net/11536/26507-
dc.description.abstractUtilizing high-resolution O K-edge X-ray absorption spectra, we report a comparative study on the variation of hole states with Pr doping for Y-x Pr1-xBa2Cu3O7 and YxPr1-xBa2 Cu-4 O-8. The depletion rate of hole carriers in the CuO2 planes with Pr doping in YxPr1-xBa2Cu4 O-8 is considerably slower than that in YxPr1-xBa2Cu3O7. The oxygen content affects the depletion rate of hole carriers in cuprates with Pr doping. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectX-ray absorption spectraen_US
dc.subjecthole carriersen_US
dc.titleHole distribution in YxPr1-xBa2Cu4O8 and YxPr1-xBa2Cu3O7 probed by X-ray absorption spectroscopyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physc.2004.03.144en_US
dc.identifier.journalPHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONSen_US
dc.citation.volume408en_US
dc.citation.issueen_US
dc.citation.spage818en_US
dc.citation.epage819en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000224051700344-
Appears in Collections:Conferences Paper


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