標題: Optical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxy
作者: Kuo, MC
Chiu, KC
Shih, TH
Lai, YJ
Yang, CS
Chen, WK
Chuu, DS
Lee, MC
Chou, WC
Jeng, SY
Shih, YT
Lan, WH
電子物理學系
Department of Electrophysics
關鍵字: ZnCdSe epilayer;molecular beam epitaxy;photoluminescence;activation energy
公開日期: 1-Aug-2004
摘要: Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters beta (161 K to 368K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by Gamma(T) = Gamma(0) + Gamma(a)T + Gamma(LOI)/[exp(homega(LOI)/kT) - 1] + Gamma(LO2)/[exp(homega(LO2)/kT) - 1] + Gamma(i)exp(-<E-b>/kT). The impurity binding energy, (E-b), was found to decrease as the Cd composition increases.
URI: http://dx.doi.org/10.1143/JJAP.43.5145
http://hdl.handle.net/11536/26504
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.5145
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 8A
起始頁: 5145
結束頁: 5150
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