標題: Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
作者: Wu, JW
Cheng, CC
Chiu, KL
Guo, JC
Lien, WY
Chang, CS
Huang, GW
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: flicker noise;modeling;nonuniform threshold voltage;pocket implant
公開日期: 1-Aug-2004
摘要: The pocket implantation effect on drain current flicker noise in 0.13 mum CMOS process based high performance analog nMOSFETs is investigated. Our result shows that pocket implantation will significantly degrade device low-frequency noise primarily because of nonuniform threshold voltage distribution along the channel. An analytical flicker noise model to account for a pocket doping effect is proposed. In our model, the local threshold voltage and the width of the pocket implant region are extracted from the measured reverse short-channel effect, and the oxide trap density is extracted from a long-channel device. Good agreement between our model and the measurement result is obtained without other fitting parameters.
URI: http://dx.doi.org/10.1109/TED.2004.831369
http://hdl.handle.net/11536/26503
ISSN: 0018-9383
DOI: 10.1109/TED.2004.831369
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 8
起始頁: 1262
結束頁: 1266
Appears in Collections:Articles


Files in This Item:

  1. 000222904000007.pdf