標題: Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning
作者: Chao, TS
Lin, YH
Yang, WL
電子物理學系
Department of Electrophysics
關鍵字: in situ HF;MOSFETs;native oxide;silicon (111);vapor
公開日期: 1-Sep-2004
摘要: In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance. In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111).
URI: http://dx.doi.org/10.1109/LED.2004.834733
http://hdl.handle.net/11536/26448
ISSN: 0741-3106
DOI: 10.1109/LED.2004.834733
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 9
起始頁: 625
結束頁: 627
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