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dc.contributor.authorYu, CHen_US
dc.contributor.authorHsieh, TEen_US
dc.contributor.authorYeh, TTen_US
dc.contributor.authorShieh, HPDen_US
dc.date.accessioned2014-12-08T15:38:39Z-
dc.date.available2014-12-08T15:38:39Z-
dc.date.issued2004-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.6129en_US
dc.identifier.urihttp://hdl.handle.net/11536/26441-
dc.description.abstractIn this work, we studied the enhancement of overwriting characteristics of phase-change optical disks by doping in the dielectric layers. The doping elements included chromium (Cr), molybdenum (Mo), nickel (Ni), tantalum (Ta), titanium (Ti), tungsten (W), vanadium (V), and nitrogen (N-2) Dynamic test showed that doping with a certain amount of W and N-2 in dielectric layers enhanced the disk overwriting characteristics. Up to fortyfold improvement in disk cycleability was observed when N-2 gas was introduced during sputtering deposition of the upper dielectric layer at the gas flow rate of N-2/Ar = 25%. Tungsten was the best among the doping metallic elements resulting in fivefold improvement in disk cycleability. Optical property measurement revealed that the refractive index (n) decreased with increasing N-2 doping percentage, while the relatively small amount of metallic element doping negligibly changed the optical constants. Subsequent modulation simulation showed that such an optical property change is beneficial to disk overwriting characteristics. Nanoindentation test showed that N-2 doping was the most effective method for increasing the hardness of the dielectric layer. This implies that, with increasing mechanical strength, the dielectric layer possesses better resistance to thermal deformation resulting from laser heating, thereby enhancing the cycleability of optical disks.en_US
dc.language.isoen_USen_US
dc.subjectoverwriting characteristicsen_US
dc.subjectcycleabilityen_US
dc.subjectphase-change optical disken_US
dc.subjectdopingen_US
dc.subjectdielectric layeren_US
dc.titleEnhancing the overwriting characteristics of phase-change optical disks by doping in dielectric layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.6129en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue9Aen_US
dc.citation.spage6129en_US
dc.citation.epage6133en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000224579000039-
dc.citation.woscount0-
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