標題: Enhancing the overwriting characteristics of phase-change optical disks by doping in dielectric layers
作者: Yu, CH
Hsieh, TE
Yeh, TT
Shieh, HPD
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
關鍵字: overwriting characteristics;cycleability;phase-change optical disk;doping;dielectric layer
公開日期: 1-Sep-2004
摘要: In this work, we studied the enhancement of overwriting characteristics of phase-change optical disks by doping in the dielectric layers. The doping elements included chromium (Cr), molybdenum (Mo), nickel (Ni), tantalum (Ta), titanium (Ti), tungsten (W), vanadium (V), and nitrogen (N-2) Dynamic test showed that doping with a certain amount of W and N-2 in dielectric layers enhanced the disk overwriting characteristics. Up to fortyfold improvement in disk cycleability was observed when N-2 gas was introduced during sputtering deposition of the upper dielectric layer at the gas flow rate of N-2/Ar = 25%. Tungsten was the best among the doping metallic elements resulting in fivefold improvement in disk cycleability. Optical property measurement revealed that the refractive index (n) decreased with increasing N-2 doping percentage, while the relatively small amount of metallic element doping negligibly changed the optical constants. Subsequent modulation simulation showed that such an optical property change is beneficial to disk overwriting characteristics. Nanoindentation test showed that N-2 doping was the most effective method for increasing the hardness of the dielectric layer. This implies that, with increasing mechanical strength, the dielectric layer possesses better resistance to thermal deformation resulting from laser heating, thereby enhancing the cycleability of optical disks.
URI: http://dx.doi.org/10.1143/JJAP.43.6129
http://hdl.handle.net/11536/26441
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.6129
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 9A
起始頁: 6129
結束頁: 6133
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