標題: Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates
作者: Yang, TH
Luo, GL
Chang, EY
Hsieh, YC
Chang, CY
材料科學與工程學系
友訊交大聯合研發中心
Department of Materials Science and Engineering
D Link NCTU Joint Res Ctr
公開日期: 1-Sep-2004
摘要: A mechanism of interface blocking was proposed to reduce the threading dislocations in the SiGe and Ge layers on Si(100) substrates. In this work, epitaxial Si1-xGex/Si1-(x-y)Gex-y and Ge/SiyGe1-y layers were grown by UHV/CVD. It was surprisingly found that if the variation of the Ge composition, y, across the interface of Si1-xGex/Si1-(x-y)Gex-y or Ge/SiyGe1-y is higher than a certain value, most of the threading dislocations appear to be blocked and confined in the underlying Si1-(x-y)Gex-y or SiGe1-y layer by the interface. It implies that this finding can provide a simple way to grow high-quality relaxed SiGe and Ge layers on the Si substrates. (C) 2004 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1781188
http://hdl.handle.net/11536/26423
ISSN: 1071-1023
DOI: 10.1116/1.1781188
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 22
Issue: 5
起始頁: L17
結束頁: L19
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