標題: Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
作者: Zous, NK
Lee, MY
Tsai, WJ
Kuo, A
Huang, LT
Lu, TC
Liu, CJ
Wang, TH
Lu, WP
Ting, WC
Ku, J
Lu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: lateral migration;MXVAND;NBit;nitride storage;NROM;trapped hole
公開日期: 1-Sep-2004
摘要: The negative threshold voltage (V-t) shift of a nitride storage flash memory cell in the erase state will result in an increase in leakage current. By utilizing a charge pumping method, we found that trapped hole lateral migration is responsible for this V-t shift. Hole transport in nitride is characterized by monitoring gate induced drain leakage current and using a thermionic emission model. The hole emission induced V-t shift shows a linear correlation with bake time in a semi-logarithm plot and its slope depends on the bake temperature. Based on the result, an accelerated qualification method for the negative V-t drift is proposed.
URI: http://dx.doi.org/10.1109/LED. 2004.833824
http://hdl.handle.net/11536/26419
ISSN: 0741-3106
DOI: 10.1109/LED. 2004.833824
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 9
起始頁: 649
結束頁: 651
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