標題: A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
作者: Wu, N
Zhang, QC
Zhu, CX
Chan, DSH
Du, AY
Balasubramanian, N
Li, MF
Chin, A
Sin, JKO
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium;HfO2;high-kappa;MOSFET;surface passivation
公開日期: 1-Sep-2004
摘要: In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a similar to 140% higher peak mobility than that of the device with surface nitridation.
URI: http://dx.doi.org/10.1109/LED.2004.833842
http://hdl.handle.net/11536/26415
ISSN: 0741-3106
DOI: 10.1109/LED.2004.833842
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 9
起始頁: 631
結束頁: 633
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