標題: Separation of channel backscattering coefficients in nanoscale MOSFETs
作者: Chen, MJ
Huang, HT
Chou, YC
Chen, RT
Tseng, YT
Chen, PN
Diaz, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOSFETs;nanoscale;scattering
公開日期: 1-Sep-2004
摘要: Channel backscattering coefficients in the kBT layer (near the source) of 1.65-nm-thick gate oxide, 68-nm gate length bulk n-channel MOSFETs are systematically separated into two distinct components: the quasithermal-equilibrium mean-free-path for backscattering and the width of the kBT layer. Evidence to confirm the validity of the separation procedure is further produced: 1) the near-source channel conduction-band profile; 2) the existing value of kBT layer width from the sophisticated device simulation; and 3) an analytic temperature-dependent drain current model for the channel backscattering coefficients. The findings are also consistent with each other and therefore corroborate channel backscattering as the origin of the coefficients. Other interpretations and clarifications are determined with respect to the very recently released Monte Carlo particle simulation. Consequently, it can be reasonably claimed that the separated components, as well as their dependencies on temperature and bias, are adequate while being used to describe the operation of the devices undertaken within the framework of the channel backscattering theory.
URI: http://dx.doi.org/10.1109/TED.2004.833586
http://hdl.handle.net/11536/26390
ISSN: 0018-9383
DOI: 10.1109/TED.2004.833586
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 9
起始頁: 1409
結束頁: 1415
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