標題: Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
作者: Chen, MC
Ku, SH
Chan, CT
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Sep-2004
摘要: Enhanced oxide breakdown progression in ultra-thin oxide silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors is observed, as compared to bulk devices. The enhanced progression is attributed to the increase of hole stress current resulting from breakdown induced channel carrier heating in a floating-body configuration. Numerical analysis of hole tunneling current and hot carrier luminescence measurement are performed to support our proposed theory. This phenomenon is particularly significant to the reliability of devices with ultra-thin oxides and low operation gate voltage. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1776640
http://hdl.handle.net/11536/26378
ISSN: 0021-8979
DOI: 10.1063/1.1776640
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 96
Issue: 6
起始頁: 3473
結束頁: 3477
Appears in Collections:Articles


Files in This Item:

  1. 000223720000070.pdf