標題: High performance CPW and microstrip ring resonators on silicon substrates
作者: Chen, CC
Hung, BF
Chin, A
McAlister, SP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CPW;ring resonators;VLSI;RF;Si
公開日期: 20-Sep-2004
摘要: High performance CPW and novel microstrip ring resonators at similar to30 GHz and 40 GHz have been fabricated on Si substrates, using an optimized proton-implantation process. Very good insertion loss and resonator characteristics, close to those from ideal electromagnetic simulations, were measured. In contrast, the ring resonators on VLSI-standard Si, without implantation, have worse transmission and reflection loss, thus prohibiting applications in RF circuits. (C) 2004 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.20353
http://hdl.handle.net/11536/26373
ISSN: 0895-2477
DOI: 10.1002/mop.20353
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 42
Issue: 6
起始頁: 511
結束頁: 514
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