標題: Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
作者: Low, T
Li, MF
Shen, C
Yeo, YC
Hou, YT
Zhu, CX
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 20-Sep-2004
摘要: Electron mobility in strained silicon and various surface oriented germanium ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness are systematically studied. For biaxial tensile strained-Si UTB MOSFETs, strain effects offer mobility enhancement down to a body thickness of 3 nm, below which strong quantum confinement effect renders further valley splitting via application of strain redundant. For Ge channel UTB MOSFETs, electron mobility is found to be highly dependent on surface orientation. Ge<100> and Ge<110> surfaces have low quantization mass that leads to a lower mobility than that of Si in aggressively scaled UTB MOSFETs. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1788888
http://hdl.handle.net/11536/26372
ISSN: 0003-6951
DOI: 10.1063/1.1788888
期刊: APPLIED PHYSICS LETTERS
Volume: 85
Issue: 12
起始頁: 2402
結束頁: 2404
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