標題: Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films
作者: Wang, SJ
Chen, CH
Chang, SC
Uang, KM
Juan, CP
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 20-Sep-2004
摘要: In this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250-260 mum(-2) and length/diameter in the range of 0.2-0.3 mum/13-15 nm were obtained from the 700degreesC-annealed samples, which exhibit good electron field emission characteristics with a typical turn-on field of about 1.7 V/mum. The self-catalytic growth of W2C nanowires is attributed to the formation of alpha-W2C phase caused by carbon depletion in the WCx films during thermal annealing. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1791322
http://hdl.handle.net/11536/26371
ISSN: 0003-6951
DOI: 10.1063/1.1791322
期刊: APPLIED PHYSICS LETTERS
Volume: 85
Issue: 12
起始頁: 2358
結束頁: 2360
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