標題: DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
作者: Chen, Shu-Han
Chang, Chao-Min
Chiang, Pei-Yi
Wang, Sheng-Yu
Chang, Wen-Hao
Chyi, Jen-Inn
電子物理學系
Department of Electrophysics
關鍵字: Heterojunction bipolar transistors (HBTs);InAlAs/InGaAsSb;type-II base-collector (B/C) junction
公開日期: 1-Dec-2010
摘要: DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs.
URI: http://dx.doi.org/10.1109/TED.2010.2072927
http://hdl.handle.net/11536/26300
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2072927
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 12
起始頁: 3327
結束頁: 3332
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