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dc.contributor.authorWu, Yu-Shengen_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2014-12-08T15:38:25Z-
dc.date.available2014-12-08T15:38:25Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2010.2080682en_US
dc.identifier.urihttp://hdl.handle.net/11536/26298-
dc.description.abstractThis paper investigates the impact of surface orientation on V(th) sensitivity to process variations for Si and Ge fin-shaped field-effect transistors (FinFETs) using an analytical solution of the Schrodinger equation. Our theoretical model considers the parabolic potential well due to short-channel effects and, therefore, can be used to assess the quantum-confinement effect in short-channel FinFETs. Our study indicates that, for ultrascaled FinFETs, the importance of channel thickness (t(ch)) variations increases due to the quantum-confinement effect. The Si-(100) and Ge-(111) surfaces show lower V(th) sensitivity to the t(ch) variation as compared with other orientations. On the contrary, the quantum-confinement effect reduces the V(th) sensitivity to the L(eff) variation, and Si-(111) and Ge-(100) surfaces show lower V(th) sensitivity as compared with other orientations. Our study may provide insights for device design and circuit optimization using advanced FinFET technologies.en_US
dc.language.isoen_USen_US
dc.subjectFin-shaped field-effect transistor (FinFET)en_US
dc.subjectquantum effectsen_US
dc.subjectsurface orientationen_US
dc.subjectvariationen_US
dc.titleImpact of Surface Orientation on the Sensitivity of FinFETs to Process Variations-An Assessment Based on the Analytical Solution of the Schrodinger Equationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2010.2080682en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume57en_US
dc.citation.issue12en_US
dc.citation.spage3312en_US
dc.citation.epage3317en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000284417700011-
dc.citation.woscount1-
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