標題: Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
作者: Kuo, Chien-I
Hsu, Heng-Tung
Wu, Chien-Ying
Chang, Edward Y.
Chen, Yu-Lin
Lim, Wee-Chin
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Dec-2010
摘要: Forty-nanometer lnAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from 395 GHz to 423 GHz was achieved with minimum noise figure below 2.5 dB up to 64 GHz at only 4.33 mW DC power consumption level. Besides, the output conductance was decreased from 2400 mS/ mm to 325 mS/mm. These superior performances are attributed to mitigation of the short-channel effect through the proposed technology. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2010.07.027
http://hdl.handle.net/11536/26292
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.07.027
期刊: MICROELECTRONIC ENGINEERING
Volume: 87
Issue: 12
起始頁: 2625
結束頁: 2628
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